BFP 405F H6327

BFP405F Low profile wideband silicon NPN RF bipolar transistor Product description The BFP405F is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz and low current characteristics make the device suitable for oscillators up to 12 GHz. It remains cost competitive without compromising on ease of use. Feature list • • • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz, 2 V, 2 mA High gain Gms = 22.5 dB at 1.8 GHz, 2 V, 5 mA OIP3 = 14 dBm at 1.8 GHz, 2 V, 5 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Radio-frequency oscillators Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP405F / BFP405FH6327XTSA1 TSFP-4-1 1=B 2=E 3=C 4=E Marking Pieces / Reel ALs 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-01-25 BFP405F Low profile wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Package information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Datasheet 2 Revision 2.0 2019-01-25 BFP405F Low profile wideband silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.5 4.1 TA = -55 °C, open base Collector emitter voltage VCES 15 E-B short circuited Collector base voltage VCBO 15 Open emitter Emitter base voltage VEBO 1.5 Open collector Base current IB 3 Collector current IC 25 Total power dissipation 1) Ptot Junction temperature TJ Storage temperature TStg mA – 75 mW TS ≤ 112 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 2019-01-25 BFP405F Low profile wideband silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point Figure 1 Datasheet RthJS Values Min. Typ. Max. – 500 – Unit Note or test condition K/W – Total power dissipation Ptot = f(TS) 4 Revision 2.0 2019-01-25 BFP405F Low profile wideband silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Collector emitter breakdown voltage V(BR)CEO 4 5 – V IC = 1 mA, IB = 0, open base Collector emitter leakage current ICES – – 10 2) μA VCE = 15 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 100 2) nA VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 1 2) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 60 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 95 μA 130 Values Min. Typ. Max. VCE = 4 V, IC = 5 mA, pulse measured Unit Note or test condition Transition frequency fT 18 25 – GHz VCE = 3 V, IC = 10 mA, f = 2 GHz Collector base capacitance CCB – 0.05 0.1 pF VCB = 2 V, VBE = 0, f = 1 MHz, emitter grounded Collector emitter capacitance CCE 0.2 – Emitter base capacitance CEB 0.25 2 VCE = 2 V, VBE = 0, f = 1 MHz, base grounded VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 Revision 2.0 2019-01-25 BFP405F Low profile wideband silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT C E VB B Bias-T E (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 2 V, f = 1.8 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure NFmin – Datasheet 22.5 18 14 0 Note or test condition Max. – dB 1.25 Linearity OIP3 • 3rd order intercept point at output OP • 1 dB gain compression point at output 1dB Note: Typ. Unit IC = 5 mA IC = 2 mA dBm IC = 5 mA, ZS = ZL = 50 Ω Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz. 6 Revision 2.0 2019-01-25 BFP405F Low profile wideband silicon NPN RF bipolar transistor Package information TSFP-4-1 4 Package information TSFP-4-1 Figure 3 Package outline Figure 4 Foot print Figure 5 Marking layout example Figure 6 Tape dimensions Datasheet 7 Revision 2.0 2019-01-25 BFP405F Low profile wideband silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout. Datasheet 8 Revision 2.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-pji1524053860431 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury